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Title: MOCVD grown β -Ga 2 O 3 metal-oxide-semiconductor field effect transistors on sapphire
Award ID(s):
1748339
PAR ID:
10113004
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Applied Physics Express
Volume:
12
Issue:
9
ISSN:
1882-0778
Page Range / eLocation ID:
095503
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  1. Abstract

    Many topological semimetals are known to exhibit exceptional electronic properties, which are the fundamental basis for design of novel devices and further applications. Materials containing the structural motif of a square net are known to frequently be topological semimetals. In this work, the synthesis and structural characterization of the square‐net‐based magnetic topological semimetal candidates GdSbxTe2−xδ(0,δindicating the vacancy level) are reported. The structural evolution of the series with Sb substitution is studied, finding a transition between a simple tetragonal square‐net structure to complex superstructure formations due to the presence of charge density waves. The structural modulations coincide with a significant modification of the magnetic order. This work thus establishes GdSbxTe2−xδas a platform to study the interplay between crystal symmetry, band filling, charge density wave, and magnetism in a topological semimetal candidate.

     
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