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Title: MOCVD grown β -Ga 2 O 3 metal-oxide-semiconductor field effect transistors on sapphire
Award ID(s):
1748339
PAR ID:
10113004
Author(s) / Creator(s):
; ; ; ;
Date Published:
Journal Name:
Applied Physics Express
Volume:
12
Issue:
9
ISSN:
1882-0778
Page Range / eLocation ID:
095503
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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