Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. Physical Review Materials 3.6 Web. doi:10.1103/PhysRevMaterials.3.061602.
Sharan, Abhishek, Gui, Zhigang, & Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. Physical Review Materials, 3 (6). https://doi.org/10.1103/PhysRevMaterials.3.061602
Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson.
"Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors". Physical Review Materials 3 (6). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.3.061602.https://par.nsf.gov/biblio/10116182.
@article{osti_10116182,
place = {Country unknown/Code not available},
title = {Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors},
url = {https://par.nsf.gov/biblio/10116182},
DOI = {10.1103/PhysRevMaterials.3.061602},
abstractNote = {Not Available},
journal = {Physical Review Materials},
volume = {3},
number = {6},
publisher = {American Physical Society},
author = {Sharan, Abhishek and Gui, Zhigang and Janotti, Anderson},
}
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