Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. Physical Review Materials 3.6 Web. doi:10.1103/PhysRevMaterials.3.061602.

Sharan, Abhishek, Gui, Zhigang, & Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. Physical Review Materials, 3 (6). https://doi.org/10.1103/PhysRevMaterials.3.061602

Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson. "Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors". Physical Review Materials 3 (6). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.3.061602. https://par.nsf.gov/biblio/10116182.

@article{osti_10116182,
place = {Country unknown/Code not available}, title = {Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors}, url = {https://par.nsf.gov/biblio/10116182}, DOI = {10.1103/PhysRevMaterials.3.061602}, abstractNote = {Not Available}, journal = {Physical Review Materials}, volume = {3}, number = {6}, publisher = {American Physical Society}, author = {Sharan, Abhishek and Gui, Zhigang and Janotti, Anderson}, }