Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, and Stemmer, Susanne. Basal-plane growth of cadmium arsenide by molecular beam epitaxy. Physical Review Materials 3.3 Web. doi:10.1103/PhysRevMaterials.3.031201.
Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, and Stemmer, Susanne.
"Basal-plane growth of cadmium arsenide by molecular beam epitaxy". Physical Review Materials 3 (3). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevMaterials.3.031201.https://par.nsf.gov/biblio/10116916.
@article{osti_10116916,
place = {Country unknown/Code not available},
title = {Basal-plane growth of cadmium arsenide by molecular beam epitaxy},
url = {https://par.nsf.gov/biblio/10116916},
DOI = {10.1103/PhysRevMaterials.3.031201},
abstractNote = {Not Available},
journal = {Physical Review Materials},
volume = {3},
number = {3},
publisher = {American Physical Society},
author = {Kealhofer, David A. and Kim, Honggyu and Schumann, Timo and Goyal, Manik and Galletti, Luca and Stemmer, Susanne},
}
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