Lavanant, M., Vallobra, P., Petit Watelot, S., Lomakin, V., Kent, A. D., Sun, J., and Mangin, S. Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field. Physical Review Applied 11.3 Web. doi:10.1103/PhysRevApplied.11.034058.

Lavanant, M., Vallobra, P., Petit Watelot, S., Lomakin, V., Kent, A. D., Sun, J., & Mangin, S. Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field. Physical Review Applied, 11 (3). https://doi.org/10.1103/PhysRevApplied.11.034058

Lavanant, M., Vallobra, P., Petit Watelot, S., Lomakin, V., Kent, A. D., Sun, J., and Mangin, S. "Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field". Physical Review Applied 11 (3). Country unknown/Code not available: American Physical Society. https://doi.org/10.1103/PhysRevApplied.11.034058. https://par.nsf.gov/biblio/10117017.

@article{osti_10117017,
place = {Country unknown/Code not available}, title = {Asymmetric Magnetization Switching in Perpendicular Magnetic Tunnel Junctions: Role of the Synthetic Antiferromagnet’s Fringe Field}, url = {https://par.nsf.gov/biblio/10117017}, DOI = {10.1103/PhysRevApplied.11.034058}, abstractNote = {Not Available}, journal = {Physical Review Applied}, volume = {11}, number = {3}, publisher = {American Physical Society}, author = {Lavanant, M. and Vallobra, P. and Petit Watelot, S. and Lomakin, V. and Kent, A. D. and Sun, J. and Mangin, S.}, }