Lin, Yuh-Chen, McGuire, Felicia, Noyce, Steven, Williams, Nicholas, Cheng, Zhihui, Andrews, Joseph, and Franklin, Aaron D. Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs. IEEE Journal of the Electron Devices Society 7. Web. doi:10.1109/JEDS.2019.2922441.

Lin, Yuh-Chen, McGuire, Felicia, Noyce, Steven, Williams, Nicholas, Cheng, Zhihui, Andrews, Joseph, & Franklin, Aaron D. Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs. IEEE Journal of the Electron Devices Society, 7 (). https://doi.org/10.1109/JEDS.2019.2922441

Lin, Yuh-Chen, McGuire, Felicia, Noyce, Steven, Williams, Nicholas, Cheng, Zhihui, Andrews, Joseph, and Franklin, Aaron D. "Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs". IEEE Journal of the Electron Devices Society 7 (). Country unknown/Code not available: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/JEDS.2019.2922441. https://par.nsf.gov/biblio/10118364.

@article{osti_10118364,
place = {Country unknown/Code not available}, title = {Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs}, url = {https://par.nsf.gov/biblio/10118364}, DOI = {10.1109/JEDS.2019.2922441}, abstractNote = {Not Available}, journal = {IEEE Journal of the Electron Devices Society}, volume = {7}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Lin, Yuh-Chen and McGuire, Felicia and Noyce, Steven and Williams, Nicholas and Cheng, Zhihui and Andrews, Joseph and Franklin, Aaron D.}, }