Sun, Zhiyuan, Huang, Chunyi, Guo, Jinglong, Dong, Jason T., Klie, Robert F., Lauhon, Lincoln J., and Seidman, David N. Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation. Retrieved from https://par.nsf.gov/biblio/10118992. ACS Nano 13.3 Web. doi:10.1021/acsnano.9b01231.

Sun, Zhiyuan, Huang, Chunyi, Guo, Jinglong, Dong, Jason T., Klie, Robert F., Lauhon, Lincoln J., & Seidman, David N. Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation. ACS Nano, 13 (3). Retrieved from https://par.nsf.gov/biblio/10118992. https://doi.org/10.1021/acsnano.9b01231

Sun, Zhiyuan, Huang, Chunyi, Guo, Jinglong, Dong, Jason T., Klie, Robert F., Lauhon, Lincoln J., and Seidman, David N. "Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation". ACS Nano 13 (3). Country unknown/Code not available. https://doi.org/10.1021/acsnano.9b01231. https://par.nsf.gov/biblio/10118992.

@article{osti_10118992,
place = {Country unknown/Code not available}, title = {Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation}, url = {https://par.nsf.gov/biblio/10118992}, DOI = {10.1021/acsnano.9b01231}, abstractNote = {}, journal = {ACS Nano}, volume = {13}, number = {3}, author = {Sun, Zhiyuan and Huang, Chunyi and Guo, Jinglong and Dong, Jason T. and Klie, Robert F. and Lauhon, Lincoln J. and Seidman, David N.}, }