Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi. Journal of Applied Physics 126.8 Web. doi:10.1063/1.5098809.

Schaefer, S. T., Kosireddy, R. R., Webster, P. T., & Johnson, S. R. Molecular beam epitaxy growth and optical properties of InAsSbBi. Journal of Applied Physics, 126 (8). https://doi.org/10.1063/1.5098809

Schaefer, S. T., Kosireddy, R. R., Webster, P. T., and Johnson, S. R. "Molecular beam epitaxy growth and optical properties of InAsSbBi". Journal of Applied Physics 126 (8). Country unknown/Code not available: American Institute of Physics. https://doi.org/10.1063/1.5098809. https://par.nsf.gov/biblio/10119717.

@article{osti_10119717,
place = {Country unknown/Code not available}, title = {Molecular beam epitaxy growth and optical properties of InAsSbBi}, url = {https://par.nsf.gov/biblio/10119717}, DOI = {10.1063/1.5098809}, abstractNote = {Not Available}, journal = {Journal of Applied Physics}, volume = {126}, number = {8}, publisher = {American Institute of Physics}, author = {Schaefer, S. T. and Kosireddy, R. R. and Webster, P. T. and Johnson, S. R.}, }