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Title: Structural phase diagram and magnetic properties of Sc-substituted rare earth ferrites R 1−x Sc x FeO 3 ( R  = Lu, Yb, Er, and Ho)
NSF-PAR ID:
10120051
Author(s) / Creator(s):
 ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
125
Issue:
24
ISSN:
0021-8979
Page Range / eLocation ID:
Article No. 244101
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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  2. Epitaxial ScxAl1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (εr) values relative to AlN. εrvalues of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that ScxAl1−xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial ScxAl1−xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

     
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