Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc
Structural phase diagram and magnetic properties of Sc-substituted rare earth ferrites R 1−x Sc x FeO 3 ( R = Lu, Yb, Er, and Ho)
- NSF-PAR ID:
- 10120051
- Publisher / Repository:
- American Institute of Physics
- Date Published:
- Journal Name:
- Journal of Applied Physics
- Volume:
- 125
- Issue:
- 24
- ISSN:
- 0021-8979
- Page Range / eLocation ID:
- Article No. 244101
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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x Ga1−x N/GaN and Scx Al1−x N/AlN grown by molecular beam epitaxy (MBE). In the Scx Ga1−x N/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 1019 cm−3, with an increase directly correlated with the scandium content. In the Scx Al1−x N–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2O3template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 1019and 1021 cm−3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. -
Epitaxial ScxAl1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (εr) values relative to AlN. εrvalues of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that ScxAl1−xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial ScxAl1−xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.