More Like this

1. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc _x Ga _1−x N and Sc _x Al _1−x N

   https://doi.org/10.1002/pssb.201900612  

   Casamento, Joseph ; Xing, Huili Grace ; Jena, Debdeep ( January 2020 , physica status solidi (b))
2. Direct Correlation of Mechanical Hardness and Chemical Bonding in Intermetallic Double Perovskite Borides Sc ₂ Ir _6–x Pd _x B

   https://doi.org/10.1021/acs.jpcc.0c08773  

   Scheifers, Jan P. ; Nguyen, Raymond D.-T. ; Zhang, Yuemei ; Fokwa, Boniface P. ( November 2020 , The Journal of Physical Chemistry C)
3. Epitaxial Sc _x Al _{1− x} N on GaN exhibits attractive high-K dielectric properties

   https://doi.org/10.1063/5.0075636  

   Casamento, Joseph ; Lee, Hyunjea ; Maeda, Takuya ; Gund, Ved ; Nomoto, Kazuki ; van Deurzen, Len ; Turner, Wesley ; Fay, Patrick ; Mu, Sai ; Van de Walle, Chris G. ; et al ( April 2022 , Applied Physics Letters)

   Epitaxial Sc_xAl_1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε_r) values relative to AlN. ε_rvalues of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc_xAl_1−xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc_xAl_1−xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.
4. Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al _1−x Sc _x N thin films

   https://doi.org/10.1063/5.0061787  

   Yoshioka, Valerie ; Lu, Jian ; Tang, Zichen ; Jin, Jicheng ; Olsson, Roy H. ; Zhen, Bo ( October 2021 , APL Materials)
5. Effect of R-site element on crystalline phase and thermal stability of Fe substituted Mn mullite-type oxides: R ₂ (Mn _1−x Fe _x ) ₄ O _10−δ (R = Y, Sm or Bi; x = 0, 0.5, 1)

   https://doi.org/10.1039/C7RA09699B  

   Thampy, Sampreetha ; Ashburn, Nickolas ; Martin, Thomas J. ; Li, Chenzhe ; Zheng, Yongping ; Chan, Julia Y. ; Cho, Kyeongjae ; Hsu, Julia W. ( January 2018 , RSC Advances)

   Combining experimental and theoretical studies, we investigate the role of R-site (R = Y, Sm, Bi) element on the phase formation and thermal stability of R 2 (Mn 1−x Fe x ) 4 O 10−δ ( x = 0, 0.5, 1) mullite-type oxides. Our results show a distinct R-site dependent phase behavior for mullite-type oxides as Fe is substituted for Mn: 100% mullite-type phase was formed in (Y, Sm, Bi) 2 Mn 4 O 10 ; 55% and 18% of (Y, Sm) 2 Mn 2 Fe 2 O 10−δ was found when R = Y and Sm, respectively, for equal Fe and Mn molar concentrations in the reactants, whereas Bi formed 54% O10- and 42% O9-mixed mullite-type phases. Furthermore, when the reactants contain 100% Fe, no mullite-type phase was formed for R = Y and Sm, but a sub-group transition to Bi 2 Fe 4 O 9 O9-phase was found for R = Bi. Thermogravimetric analysis and density functional theory (DFT) calculation results show a decreasing thermal stability in O10-type structure with increasing Fe incorporation; for example, the decomposition temperature is 1142 K for Bi 2 Mn 2 Fe 2 O 10−δ vs. 1217 K for Bi 2 Mn 4more »O 10 . On the other hand, Bi 2 Fe 4 O 9 O9-type structure is found to be thermally stable up to 1227 K. These findings are explained by electronic structure calculations: (1) as Fe concentration increases, Jahn–Teller distortion results in mid band-gap empty states from unstable Fe 4+ occupied octahedra, which is responsible for the decrease in O10 structure stability; (2) the directional sp orbital hybridization unique to Bi effectively stabilizes the mullite-type structure as Fe replaces Mn.« less