Wu, Feng, Smart, Tyler J., Xu, Junqing, and Ping, Yuan. Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles. Retrieved from https://par.nsf.gov/biblio/10120453. Physical Review B 100.8 Web. doi:10.1103/PhysRevB.100.081407.
Wu, Feng, Smart, Tyler J., Xu, Junqing, & Ping, Yuan. Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles. Physical Review B, 100 (8). Retrieved from https://par.nsf.gov/biblio/10120453. https://doi.org/10.1103/PhysRevB.100.081407
@article{osti_10120453,
place = {Country unknown/Code not available},
title = {Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles},
url = {https://par.nsf.gov/biblio/10120453},
DOI = {10.1103/PhysRevB.100.081407},
abstractNote = {},
journal = {Physical Review B},
volume = {100},
number = {8},
author = {Wu, Feng and Smart, Tyler J. and Xu, Junqing and Ping, Yuan},
}
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