Efficient coupled-cavity electro-optic modulator on silicon for high carrier frequency, narrowband RF signals
We demonstrate a coupled-cavity electro-optic modulator with 5.5 GHz bandwidth centered at 41 GHz. The device, driven with a −5 dBm RF signal, shows −27 dB pump-to-sideband conversion efficiency, a 15 dB improvement over a regular ring modulator.
more »
« less
- Award ID(s):
- 1701596
- PAR ID:
- 10121122
- Date Published:
- Journal Name:
- Frontiers in Optics + Laser Science APS/DLS, OSA Technical Digest
- Page Range / eLocation ID:
- FW5C.1
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
As a key potential component of future sixth-generation (6G) communication systems, terahertz (THz) technology has received much attention in recent years. However, a lack of effective high-speed direct modulation of THz waves has limited the development of THz communication technology. Currently, most high-speed modulators are based on photonic systems that can modulate electromagnetic waves with high speed using sophisticated optoelectronic conversion techniques. Yet, they usually suffer from low conversion efficiency of light to the THz range, resulting in low output power of the modulated THz waves. Here, we describe a guided-wave modulator for THz signals whose performance nearly matches that of existing in-line fiber-optic modulators. Our results demonstrate a maximum modulation depth greater than 20 dB (99%) and a maximum sinusoidal modulation speed of more than 30 GHz, with an insertion loss around 7 dB. We demonstrate the capabilities of this modulator in a point-to-point communication link with a 25 Gbit/s modulation speed. Our modulator design, based on near-field coupling of a THz transmission line to a single resonant meta-element, represents a powerful improvement for on-chip integrated high-performance THz devices.more » « less
-
Abstract We present a metal–semiconductor (M–S) based electro-optic modulator designed for functional plasmonic circuits, utilizing the active control of surface plasmon polaritons (SPPs) at M–S junction interfaces. Through self-consistent multiphysics simulations, including electromagnetic, thermal, and current–voltage (IV) characteristics, we estimate bias- and doping concentration-dependent SPP modulation and switching times. This study focuses on germanium-based Schottky contacts and can be extended to other semiconducting materials. We performed parametric analysis using the developed thermo-electro-optic model to identify device parameters and dimensions for enhanced optical confinement and faster operation. The studied device exhibits signal modulation exceeding −28 dB, responsivity greater than −1800 dB V−1, and switching rates of 8 GHz, suggesting potential data rates above 16 Gbit s−1. Additionally, frequency response analysis using the numerical model confirms the device’s electrical tunability and predicts a 3 dB bandwidth of up to 4 GHz. These findings highlight the significant potential of Schottky junctions as active components in the development of plasmonic-based integrated circuits.more » « less
An official website of the United States government

