Nanoscale Three-Independent-Gate Transistors: Geometric TCAD Simulations at the 10 nm-Node
- Award ID(s):
- 1751064
- PAR ID:
- 10121195
- Date Published:
- Journal Name:
- IEEE Nanotechnology Materials and Devices Conference
- ISSN:
- 2378-377X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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