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Title: Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon
We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1−xO3−δ=Sið001Þ interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.  more » « less
Award ID(s):
1508530
PAR ID:
10123733
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
Physical review letters
Volume:
123
ISSN:
1079-7114
Page Range / eLocation ID:
026805
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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