More Like this

1. Looking for Obscured Young Star Clusters in NGC 1313

   https://doi.org/10.3847/1538-4357/abe0b5  

   Messa, Matteo ; Calzetti, Daniela ; Adamo, Angela ; Grasha, Kathryn ; Johnson, Kelsey E. ; Sabbi, Elena ; Smith, Linda J. ; Bajaj, Varun ; Finn, Molly K. ; Lin, Zesen ( March 2021 , The Astrophysical Journal)

   Abstract Using recently acquired Hubble Space Telescope NIR observations ( J , Pa β , and H bands) of the nearby galaxy NGC 1313, we investigate the timescales required by a young star cluster to emerge from its natal cloud. We search for extincted star clusters, potentially embedded in their natal cloud as either (1) compact sources in regions with high H α /Pa β extinctions or (2) compact H ii regions that appear as point-like sources in the Pa β emission map. The NUV–optical–NIR photometry of the candidate clusters is used to derive their ages, masses, and extinctions via a least- χ 2 spectral energy distribution broad- and narrowband fitting process. The 100 clusters in the final samples have masses in the range and moderate extinctions, E ( B − V ) ≲ 1.0 mag. Focusing on the young clusters (0–6 Myr), we derive a weak correlation between extinction and age of the clusters. Almost half of the clusters have low extinctions, E ( B − V ) < 0.25 mag, already at very young ages (≤3 Myr), suggesting that dust is quickly removed from clusters. A stronger correlation is found between the morphology of the nebular emission (compact,more »partial or absent, both in H α and Pa β ) and cluster age. Relative fractions of clusters associated with a specific nebular morphology are used to estimate the typical timescales for clearing the natal gas cloud, resulting in between 3 and 5 Myr, ∼1 Myr older than what was estimated from NUV–optical-based cluster studies. This difference hints at a bias for optical-only-based studies, which James Webb Space Telescope will address in the coming years.« less
2. The ionization fraction in OMC-2 and OMC-3

   https://doi.org/10.1051/0004-6361/202140670  

   Salas, P. ; Rugel, M. R. ; Emig, K. L. ; Kauffmann, J. ; Menten, K. M. ; Wyrowski, F. ; Tielens, A. G. ( September 2021 , Astronomy & Astrophysics)

   Context. The electron density ( n e − ) plays an important role in setting the chemistry and physics of the interstellar medium. However, measurements of n e − in neutral clouds have been directly obtained only toward a few lines of sight or they rely on indirect determinations. Aims. We use carbon radio recombination lines and the far-infrared lines of C + to directly measure n e − and the gas temperature in the envelope of the integral shaped filament (ISF) in the Orion A molecular cloud. Methods. We observed the C102 α (6109.901 MHz) and C109 α (5011.420 MHz) carbon radio recombination lines (CRRLs) using the Effelsberg 100 m telescope at ≈2′ resolution toward five positions in OMC-2 and OMC-3. Since the CRRLs have similar line properties, we averaged them to increase the signal-to-noise ratio of the spectra. We compared the intensities of the averaged CRRLs, and the 158 μm-[CII] and [ 13 CII] lines to the predictions of a homogeneous model for the C + /C interface in the envelope of a molecular cloud and from this comparison we determined the electron density, temperature and C + column density of the gas. Results. We detect the CRRLs towardmore »four positions, where their velocity ( v LSR  ≈ 11 km s −1 ) and widths ( σ v  ≈ 1 km s −1 ) confirms that they trace the envelope of the ISF. Toward two positions we detect the CRRLs, and the 158 μm-[CII] and [ 13 CII] lines with a signal-to-noise ratio ≥5, and we find n e −  = 0.65 ± 0.12 cm −3 and 0.95 ± 0.02 cm −3 , which corresponds to a gas density n H  ≈ 5 × 10 3 cm −3 and a thermal pressure of p th  ≈ 4 × 10 5 K cm −3 . We also constrained the ionization fraction in the denser portions of the molecular cloud using the HCN(1–0) and C 2 H(1–0) lines to x (e − ) ≤ 3 × 10 −6 . Conclusions. The derived electron densities and ionization fraction imply that x (e − ) drops by a factor ≥100 between the C + layer and the regions probed by HCN(1–0). This suggests that electron collisional excitation does not play a significant role in setting the excitation of HCN(1–0) toward the region studied, as it is responsible for only ≈10% of the observed emission.« less
3. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K.more »The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
4. Observing the influence of the youngest super star clusters in NGC 1569: Keck Brackett α spectroscopy

   https://doi.org/10.1093/mnras/stab643  

   Cohen, Daniel P ; Turner, Jean L ; Beck, Sara C ; Consiglio, S Michelle ( March 2021 , Monthly Notices of the Royal Astronomical Society)

   ABSTRACT We report Keck–NIRSPEC observations of the Brackett α 4.05 μm recombination line across the two candidate embedded super star clusters (SSCs) in NGC 1569. These SSCs power a bright H ii region and have been previously detected as radio and mid-infrared sources. Supplemented with high-resolution VLA mapping of the radio continuum along with IRTF–TEXES spectroscopy of the [S iv] 10.5 μm line, the Brackett α data provide new insight into the dynamical state of gas ionized by these forming massive clusters. Near-infrared sources detected in 2 μm images from the slit-viewing Camera are matched with Gaia sources to obtain accurate celestial coordinates and slit positions to within ∼0${_{.}^{\prime\prime}}$1. Br α is detected as a strong emission peak powered by the less luminous infrared source, MIR1 (LIR ∼ 2 × 107 $\rm L_\odot$). The second candidate SSC MIR2 is more luminous (LIR ≳ 4 × 108 $\rm L_\odot$) but exhibits weak radio continuum and Br α emission, suggesting the ionized gas is extremely dense (ne ≳ 105 cm−3), corresponding to hypercompact H ii regions around newborn massive stars. The Br α and [S iv] lines across the region are both remarkably symmetric and extremely narrow, with observed line widths Δv ≃ 40 $\rm km\, s^{-1}$, full width at half-maximum. This result is the first clear evidence thatmore »feedback from NGC 1569’s youngest giant clusters is currently incapable of rapid gas dispersal, consistent with the emerging theoretical paradigm in the formation of giant star clusters.« less
5. Synthesis, structures, and reactivity of isomers of [RuCp*(1,4-(Me ₂ N) ₂ C ₆ H ₄ )] ₂

   https://doi.org/10.1039/D1DT02155A  

   Longhi, Elena ; Risko, Chad ; Bacsa, John ; Khrustalev, Victor ; Rigin, Sergei ; Moudgil, Karttikay ; Timofeeva, Tatiana V. ; Marder, Seth R. ; Barlow, Stephen ( September 2021 , Dalton Transactions)

   [RuCp*(1,3,5-R 3 C 6 H 3 )] 2 {Cp* = η 5 -pentamethylcyclopentadienyl, R = Me, Et} have previously been found to be moderately air stable, yet highly reducing, with estimated D + /0.5D 2 (where D 2 and D + represent the dimer and the corresponding monomeric cation, respectively) redox potentials of ca. −2.0 V vs. FeCp 2 +/0 . These properties have led to their use as n-dopants for organic semiconductors. Use of arenes substituted with π-electron donors is anticipated to lead to even more strongly reducing dimers. [RuCp*(1-(Me 2 N)-3,5-Me 2 C 6 H 3 )] + PF 6 − and [RuCp*(1,4-(Me 2 N) 2 C 6 H 4 )] + PF 6 − have been synthesized and electrochemically and crystallographically characterized; both exhibit D + /D potentials slightly more cathodic than [RuCp*(1,3,5-R 3 C 6 H 3 )] + . Reduction of [RuCp*(1,4-(Me 2 N) 2 C 6 H 4 )] + PF 6 − using silica-supported sodium–potassium alloy leads to a mixture of isomers of [RuCp*(1,4-(Me 2 N) 2 C 6 H 4 )] 2 , two of which have been crystallographically characterized. One of these isomers has a similar molecular structure to [RuCp*(1,3,5-Et 3more »C 6 H 3 )] 2 ; the central C–C bond is exo , exo , i.e. , on the opposite face of both six-membered rings from the metals. A D + /0.5D 2 potential of −2.4 V is estimated for this exo , exo dimer, more reducing than that of [RuCp*(1,3,5-R 3 C 6 H 3 )] 2 (−2.0 V). This isomer reacts much more rapidly with both air and electron acceptors than [RuCp*(1,3,5-R 3 C 6 H 3 )] 2 due to a much more cathodic D 2 ˙ + /D 2 potential. The other isomer to be crystallographically characterized, along with a third isomer, are both dimerized in an exo , endo fashion, representing the first examples of such dimers. Density functional theory calculations and reactivity studies indicate that the central bonds of these two isomers are weaker than those of the exo , exo isomer, or of [RuCp*(1,3,5-R 3 C 6 H 3 )] 2 , leading to estimated D + /0.5D 2 potentials of −2.5 and −2.6 V vs. FeCp 2 +/0 . At the same time the D 2 ˙ + /D 2 potentials for the exo , endo dimers are anodically shifted relative to those of [RuCp*(1,3,5-R 3 C 6 H 3 )] 2 , resulting in much greater air stability than for the exo , exo isomer.« less