Romero-Gonzalez, Jorge, and Gaillardon, Pierre-Emmanuel. BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4.1 Web. doi:10.1109/JXCDC.2018.2821638.

Romero-Gonzalez, Jorge, & Gaillardon, Pierre-Emmanuel. BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 4 (1). https://doi.org/10.1109/JXCDC.2018.2821638

Romero-Gonzalez, Jorge, and Gaillardon, Pierre-Emmanuel. "BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors". IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 (1). Country unknown/Code not available: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/JXCDC.2018.2821638. https://par.nsf.gov/biblio/10125249.

@article{osti_10125249,
place = {Country unknown/Code not available}, title = {BCB Evaluation of High-Performance and Low-Leakage Three-Independent-Gate Field-Effect Transistors}, url = {https://par.nsf.gov/biblio/10125249}, DOI = {10.1109/JXCDC.2018.2821638}, abstractNote = {Not Available}, journal = {IEEE Journal on Exploratory Solid-State Computational Devices and Circuits}, volume = {4}, number = {1}, publisher = {Institute of Electrical and Electronics Engineers}, author = {Romero-Gonzalez, Jorge and Gaillardon, Pierre-Emmanuel}, }