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Title: Interdependence of Electronic and Thermal Transport in Al x Ga 1–x N Channel HEMTs
Award ID(s):
2006299 1808900
PAR ID:
10138758
Author(s) / Creator(s):
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Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
41
Issue:
3
ISSN:
0741-3106
Page Range / eLocation ID:
461 to 464
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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