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Title: Interdependence of Electronic and Thermal Transport in Al x Ga 1–x N Channel HEMTs
Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more » ; « less
Award ID(s):
2006299 1808900
Publication Date:
NSF-PAR ID:
10138758
Journal Name:
IEEE Electron Device Letters
Volume:
41
Issue:
3
Page Range or eLocation-ID:
461 to 464
ISSN:
0741-3106
Sponsoring Org:
National Science Foundation
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