Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., and Schlom, Darrell G. Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy. Retrieved from https://par.nsf.gov/biblio/10144517. APL Materials 7.11 Web. doi:10.1063/1.5125809.

Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., & Schlom, Darrell G. Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy. APL Materials, 7 (11). Retrieved from https://par.nsf.gov/biblio/10144517. https://doi.org/10.1063/1.5125809

Mei, Antonio B., Saremi, Sahar, Miao, Ludi, Barone, Matthew, Tang, Yongjian, Zeledon, Cyrus, Schubert, Jürgen, Ralph, Daniel C., Martin, Lane W., and Schlom, Darrell G. "Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy". APL Materials 7 (11). Country unknown/Code not available. https://doi.org/10.1063/1.5125809. https://par.nsf.gov/biblio/10144517.

@article{osti_10144517,
place = {Country unknown/Code not available}, title = {Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy}, url = {https://par.nsf.gov/biblio/10144517}, DOI = {10.1063/1.5125809}, abstractNote = {}, journal = {APL Materials}, volume = {7}, number = {11}, author = {Mei, Antonio B. and Saremi, Sahar and Miao, Ludi and Barone, Matthew and Tang, Yongjian and Zeledon, Cyrus and Schubert, Jürgen and Ralph, Daniel C. and Martin, Lane W. and Schlom, Darrell G.}, }