@article{osti_10148350,
place = {Country unknown/Code not available},
title = {Enhanced ferroelectricity in ultrathin films grown directly on silicon},
url = {https://par.nsf.gov/biblio/10148350},
DOI = {10.1038/s41586-020-2208-x},
abstractNote = {},
journal = {Nature},
volume = {580},
number = {7804},
author = {Cheema, Suraj S. and Kwon, Daewoong and Shanker, Nirmaan and dos Reis, Roberto and Hsu, Shang-Lin and Xiao, Jun and Zhang, Haigang and Wagner, Ryan and Datar, Adhiraj and McCarter, Margaret R. and Serrao, Claudy R. and Yadav, Ajay K. and Karbasian, Golnaz and Hsu, Cheng-Hsiang and Tan, Ava J. and Wang, Li-Chen and Thakare, Vishal and Zhang, Xiang and Mehta, Apurva and Karapetrova, Evguenia and Chopdekar, Rajesh V and Shafer, Padraic and Arenholz, Elke and Hu, Chenming and Proksch, Roger and Ramesh, Ramamoorthy and Ciston, Jim and Salahuddin, Sayeef},
}
Warning: Leaving National Science Foundation Website
You are now leaving the National Science Foundation website to go to a non-government website.
Website:
NSF takes no responsibility for and exercises no control over the views expressed or the accuracy of
the information contained on this site. Also be aware that NSF's privacy policy does not apply to this site.