Stevens, Margaret A., Grossklaus, Kevin A., McElearney, John H., and Vandervelde, Thomas E. Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy. Retrieved from https://par.nsf.gov/biblio/10152800. Journal of Electronic Materials 48.5 Web. doi:10.1007/s11664-019-06949-6.

Stevens, Margaret A., Grossklaus, Kevin A., McElearney, John H., & Vandervelde, Thomas E. Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy. Journal of Electronic Materials, 48 (5). Retrieved from https://par.nsf.gov/biblio/10152800. https://doi.org/10.1007/s11664-019-06949-6

Stevens, Margaret A., Grossklaus, Kevin A., McElearney, John H., and Vandervelde, Thomas E. "Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy". Journal of Electronic Materials 48 (5). Country unknown/Code not available. https://doi.org/10.1007/s11664-019-06949-6. https://par.nsf.gov/biblio/10152800.

@article{osti_10152800,
place = {Country unknown/Code not available}, title = {Impact of Rotation Rate on Bismuth Saturation in GaAsBi Grown by Molecular Beam Epitaxy}, url = {https://par.nsf.gov/biblio/10152800}, DOI = {10.1007/s11664-019-06949-6}, abstractNote = {}, journal = {Journal of Electronic Materials}, volume = {48}, number = {5}, author = {Stevens, Margaret A. and Grossklaus, Kevin A. and McElearney, John H. and Vandervelde, Thomas E.}, }