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Title: Artificially engineered nanostrain in FeSexTe1-x superconductor thin films for supercurrent enhancement
Abstract

Although nanoscale deformation, such as nanostrain in iron-chalcogenide (FeSexTe1−x, FST) thin films, has attracted attention owing to its enhancement of general superconducting properties, including critical current density (Jc) and critical transition temperature, the development of this technique has proven to be an extremely challenging and complex process thus far. Herein, we successfully fabricated an epitaxial FST thin film with uniformly distributed nanostrain by injection of a trace amount of CeO2inside an FST matrix using sequential pulsed laser deposition. By means of transmission electron microscopy and geometric phase analysis, we verified that the injection of a trace amount of CeO2forms nanoscale defects, with a nanostrained region of tensile strain (εzz ≅ 0.02) along thec-axis of the FST matrix. This nanostrained FST thin film achieves a remarkableJcof 3.5 MA/cm2under a self-field at 6 K and a highly enhancedJcunder the entire magnetic field with respect to those of a pristine FST thin film.

 
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NSF-PAR ID:
10154038
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
NPG Asia Materials
Volume:
12
Issue:
1
ISSN:
1884-4049
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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    References

    Lee, D. H.; Park, H.; Clevenger, M.; Kim, H.; Kim, C. S.; Liu, M.; Kim, G.; Song, H. W.; No, K.; Kim, S. Y.; Ko, D.-K.; Lucietto, A.; Park, H.; Lee, S., High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO.ACS Applied Materials & Interfaces2021,13(46), 55676-55686.

    Hautier, G.; Miglio, A.; Ceder, G.; Rignanese, G.-M.; Gonze, X., Identification and design principles of low hole effective mass p-type transparent conducting oxides.Nat Commun2013,4.

    Yim, K.; Youn, Y.; Lee, M.; Yoo, D.; Lee, J.; Cho, S. H.; Han, S., Computational discovery of p-type transparent oxide semiconductors using hydrogen descriptor.npj Computational Materials2018,4(1), 17.

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