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Title: A thin film efficient pn-junction thermoelectric device fabricated by self-align shadow mask
Abstract

Large area highly crystalline MoS2and WS2thin films were successfully grown on different substrates using radio-frequency magnetron sputtering technique. Structural, morphological and thermoelectric transport properties of MoS2,and WS2thin films have been investigated systematically to fabricate high-efficient thermal energy harvesting devices. X-ray diffraction data revealed that crystallites of MoS2and WS2films are highly oriented in 002 plane with uniform grain size distribution confirmed through atomic force microscopy study. Surface roughness increases with substrate temperature and it plays a big role in electron and phonon scattering. Interestingly, MoS2films also display low thermal conductivity at room temperature and strongly favors achievement of higher thermoelectric figure of merit value of up to 1.98. Raman spectroscopy data shows two distinct MoS2vibrational modes at 380 cm−1for E12gand 410 cm−1for A1g. Thermoelectric transport studies further demonstrated that MoS2films show p-type thermoelectric characteristics, while WS2is an n-type material. We demonstrated high efficient pn-junction thermoelectric generator device for waste heat recovery and cooling applications.

 
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NSF-PAR ID:
10154050
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Scientific Reports
Volume:
10
Issue:
1
ISSN:
2045-2322
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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