Doping induced Mott collapse and possible density wave instabilities in (Sr1−xLax)3Ir2O7
Abstract

The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT), such as emergent electronic orders and pseudogaps, that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena is the difficulty in accessing doping levels near the parent state. TheJeff = 1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique access to the Mott transition. Here, we exploit this accessibility to study the IMT and the possible nearby electronic orders in the electron-doped bilayer iridate (Sr1 − xLax)3Ir2O7. Using spectroscopic imaging scanning tunneling microscopy, we image the La dopants in the top as well as the interlayer SrO planes. Surprisingly, we find a disproportionate distribution of La between these layers with the interlayer La being primarily responsible for the IMT. This reveals the distinct site-dependent effects of dopants on the electronic properties of bilayer systems. Electron doping also results in charge reordering. We find unidirectional electronic order concomitant with the structural distortion known to exist in this system. Intriguingly, similar to the single layer iridate, we also find local resonant more »

Authors:
; ; ; ; ; ; ;
Publication Date:
NSF-PAR ID:
10154248
Journal Name:
npj Quantum Materials
Volume:
4
Issue:
1
ISSN:
2397-4648
Publisher:
Nature Publishing Group
National Science Foundation
##### More Like this
1. Abstract

Search for novel electronically ordered states of matter emerging near quantum phase transitions is an intriguing frontier of condensed matter physics. In ruthenates, the interplay between Coulomb correlations among the 4delectronic states and their spin-orbit interactions, lead to complex forms of electronic phenomena. Here we investigate the double layered Sr3(Ru1−xMnx)2O7and its doping-induced quantum phase transition from a metal to an antiferromagnetic Mott insulator. Using spectroscopic imaging with the scanning tunneling microscope, we visualize the evolution of the electronic states in real- and momentum-space. We find a partial-gap at the Fermi energy that develops with doping to form a weak Mott insulating state. Near the quantum phase transition, we discover a spatial electronic reorganization into a commensurate checkerboard charge order. These findings bear a resemblance to the universal charge order in the pseudogap phase of cuprates and demonstrate the ubiquity of charge order that emanates from doped Mott insulators.

2. A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7(0 ≤x≤ 0.5) which drive the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT, such as power-law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism, can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gapsmore »

3. Abstract

Ion irradiation is a versatile tool to introduce controlled defects into two-dimensional (2D) MoS2on account of its unique spatial resolution and plethora of ion types and energies available. In order to fully realise the potential of this technique, a holistic understanding of ion-induced defect production in 2D MoS2crystals of different thicknesses is mandatory. X-ray photoelectron spectroscopy, electron diffraction and Raman spectroscopy show that thinner MoS2crystals are more susceptible to radiation damage caused by 225 keV Xe+ions. However, the rate of defect production in quadrilayer and bulk crystals is not significantly different under our experimental conditions. The rate at which S atoms are sputtered as a function of radiation exposure is considerably higher for monolayer MoS2, compared to bulk crystals, leading to MoO3formation. P-doping of MoS2is observed and attributed to the acceptor states introduced by vacancies and charge transfer interactions with adsorbed species. Moreover, the out-of-plane vibrational properties of irradiated MoS2crystals are shown to be strongly thickness-dependent: in mono- and bilayer MoS2, the confinement of phonons by defects results in a blueshift of the$A1g$mode. Whereas, a redshift is observed in bulk crystals due to attenuation of the effective restoring forces acting on S atoms caused by vacanciesmore »

4. In the physics of condensed matter, quantum critical phenomena and unconventional superconductivity are two major themes. In electron-doped cuprates, the low critical field (HC2) allows one to study the putative quantum critical point (QCP) at low temperature and to understand its connection to the long-standing problem of the origin of the high-TCsuperconductivity. Here we present measurements of the low-temperature normal-state thermopower (S) of the electron-doped cuprate superconductor La2−xCexCuO4(LCCO) fromx= 0.11–0.19. We observe quantum critical$S/T$versus$ln(1/T)$behavior over an unexpectedly wide doping rangex= 0.15–0.17 above the QCP (x= 0.14), with a slope that scales monotonically with the superconducting transition temperature (TCwith H = 0). The presence of quantum criticality over a wide doping range provides a window on the criticality. The thermopower behavior also suggests that the critical fluctuations are linked withTC. Above the superconductivity dome, atx= 0.19, a conventional Fermi-liquid$S∝T$behavior is found for$T≤$40 K.

5. Abstract We report on optical spectroscopic study of the Sr 3 (Ir 1- x Ru x ) 2 O 7 system over a wide doping regime. We find that the changes in the electronic structure occur in the limited range of the concentration of Ru ions where the insulator–metal transition occurs. In the insulating regime, the electronic structure associated with the effective total angular momentum J eff  = 1/2 Mott state remains robust against Ru doping, indicating the localization of the doped holes. Upon entering the metallic regime, the Mott gap collapses and the Drude-like peak with strange metallic character appears. The evolution of the electronic structure registered in the optical data can be explained in terms of a percolative insulator–metal transition. The phonon spectra display anomalous doping evolution of the lineshapes. While the phonon modes of the compounds deep in the insulating and metallic regimes are almost symmetric, those of the semiconducting compound with x  = 0.34 in close proximity to the doping-driven insulator–metal transition show a pronounced asymmetry. The temperature evolution of the phonon modes of the x  = 0.34 compound reveals the asymmetry is enhanced in the antiferromagnetic state. We discuss roles of the S  = 1 spins of the Rumore »