skip to main content


Title: Anomalous Hall magnetoresistance in a ferromagnet
Abstract

The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here, we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin–charge conversion can give rise to a different type of spin current-related spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe1−xMnx)0.6Pt0.4, Fe1−xMnx/Pt multilayer, Fe1−xMnxwithx = 0.17–0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge–spin conversion in ferromagnets and to exploit it for potential spintronic applications.

 
more » « less
NSF-PAR ID:
10154345
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Nature Communications
Volume:
9
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract

    Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization, spin‐orbit torque (SOT) operations are currently energy inefficient due to a low damping‐like SOT efficiency per unit current bias, and/or the very high resistivity of the spin Hall materials. This work reports an advantageous spin Hall material, Pd1−xPtx, which combines a low resistivity with a giant spin Hall effect as evidenced with three independent SOT ferromagnetic detectors. The optimal Pd0.25Pt0.75alloy has a giant internal spin Hall ratio of >0.60 (damping‐like SOT efficiency of ≈0.26 for all three ferromagnets) and a low resistivity of ≈57.5 µΩ cm at a 4 nm thickness. Moreover, it is found that the Dzyaloshinskii–Moriya interaction (DMI), the key ingredient for the manipulation of chiral spin arrangements (e.g., magnetic skyrmions and chiral domain walls), is considerably strong at the Pd1−xPtx/Fe0.6Co0.2B0.2interface when compared to that at Ta/Fe0.6Co0.2B0.2or W/Fe0.6Co0.2B0.2interfaces and can be tuned by a factor of 5 through control of the interfacial spin‐orbital coupling via the heavy metal composition. This work establishes a very effective spin current generator that combines a notably high energy efficiency with a very strong and tunable DMI for advanced chiral spintronics and spin torque applications.

     
    more » « less
  2. Abstract

    Magnetic skyrmions are topologically protected spin textures that are being investigated for their potential use in next generation magnetic storage devices. Here, magnetic skyrmions and other magnetic phases in Fe1−xCoxGe (x< 0.1) microplates (MPLs) newly synthesized via chemical vapor deposition are studied using both magnetic imaging and transport measurements. Lorentz transmission electron microscopy reveals a stabilized magnetic skyrmion phase near room temperature (≈280 K) and a quenched metastable skyrmion lattice via field cooling. Magnetoresistance (MR) measurements in three different configurations reveal a unique anomalous MR signal at temperatures below 200 K and two distinct field dependent magnetic transitions. The topological Hall effect (THE), known as the electronic signature of magnetic skyrmion phase, is detected for the first time in a Fe1−xCoxGe nanostructure, with a large and positive peak THE resistivity of ≈32 nΩ cm at 260 K. This large magnitude is attributed to both nanostructuring and decreased carrier concentrations due to Co alloying of the Fe1−xCoxGe MPL. A consistent magnetic phase diagram summarized from both the magnetic imaging and transport measurements shows that the magnetic skyrmions are stabilized in Fe1−xCoxGe MPLs compared to bulk materials. This study lays the foundation for future skyrmion‐based nanodevices in information storage technologies.

     
    more » « less
  3. Abstract

    Being able to electrically manipulate the magnetic properties in recently discovered van der Waals ferromagnets is essential for their integration in future spintronics devices. Here, the magnetization of a semiconducting 2D ferromagnet, i.e., Cr2Ge2Te6, is studied using the anomalous Hall effect in Cr2Ge2Te6/tantalum heterostructures. The thinner the flakes, hysteresis and remanence in the magnetization loop with out‐of‐plane magnetic fields become more prominent. In order to manipulate the magnetization in such thin flakes, a combination of an in‐plane magnetic field and a charge current flowing through Ta—a heavy metal exhibiting giant spin Hall effect—is used. In the presence of in‐plane fields of 20 mT, charge current densities as low as 5 × 105A cm–2are sufficient to switch the out‐of‐plane magnetization of Cr2Ge2Te6. This finding highlights that current densities required for spin‐orbit torque switching of Cr2Ge2Te6are about two orders of magnitude lower than those required for switching nonlayered metallic ferromagnets such as CoFeB. The results presented here show the potential of 2D ferromagnets for low‐power memory and logic applications.

     
    more » « less
  4. Abstract

    The emergence of ferromagnetism in materials where the bulk phase does not show any magnetic order demonstrates that atomically precise films can stabilize distinct ground states and expands the phase space for the discovery of materials. Here, the emergence of long-range magnetic order is reported in ultrathin (111) LaNiO3(LNO) films, where bulk LNO is paramagnetic, and the origins of this phase are explained. Transport and structural studies of LNO(111) films indicate that NiO6octahedral distortions stabilize a magnetic insulating phase at the film/substrate interface and result in a thickness-dependent metal–insulator transition att = 8 unit cells. Away from this interface, distortions relax and bulk-like conduction is regained. Synchrotron x-ray diffraction and dynamical x-ray diffraction simulations confirm a corresponding out-of-plane unit-cell expansion at the interface of all films. X-ray absorption spectroscopy reveals that distortion stabilizes an increased concentration of Ni2+ions. Evidence of long-range magnetic order is found in anomalous Hall effect and magnetoresistance measurements, likely due to ferromagnetic superexchange interactions among Ni2+–Ni3+ions. Together, these results indicate that long-range magnetic ordering and metallicity in LNO(111) films emerges from a balance among the spin, charge, lattice, and orbital degrees of freedom.

     
    more » « less
  5. Abstract

    The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg1/3Nb2/3O3‐0.32PbTiO3(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe0.5Rh0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe0.5Rh0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10−8 s m−1at 325 K while applying a −0.75 V bias.

     
    more » « less