A green‐emitting perovskite first‐order distributed feedback (DFB) laser based on the methylammonium lead bromide (MAPbBr3) with high stability is demonstrated for the first time. The laser achieves stable lasing at 550 nm with a full width at half maximum of 0.4 nm. Low lasing threshold of 60 μJ cm−2under nanosecond pulsed excitation and 3.1 μJ cm−2under femtosecond pulsed excitation is observed, showing a much lower lasing threshold compared with the second‐order DFB cavities, which are fabricated on the same substrate. By optimizing the antisolvent treatment and encapsulating with poly(methyl methacrylate), the laser lifetime, resistance to moisture, lasing threshold, and intensity are significantly improved. The lasers are fabricated with a complementary metal‐oxide‐semiconductor‐compatible process, thus offer promising potential for the integrated photonic devices.
Electrically pumped lasing from hybrid organic–inorganic metal‐halide perovskite semiconductors could lead to nonepitaxial diode lasers that are tunable throughout the visible and near‐infrared spectrum; however, a viable laser diode architecture has not been demonstrated to date. Here, an important step toward this goal is achieved by demonstrating two distinct distributed feedback light‐emitting diode architectures that achieve low threshold, optically pumped lasing. Bottom‐ and top‐emitting perovskite light‐emitting diodes are fabricated on glass and Si substrates, respectively, using a polydimethylsiloxane stamp in the latter case to nanoimprint a second‐order distributed feedback grating directly into the methylammonium lead iodide active layer. The devices exhibit room temperature thresholds as low as ≈6 µJ cm−2, a peak external quantum efficiency of ≈0.1%, and a maximum current density of ≈2 A cm−2that is presently limited by degradation associated with excessive leakage current. In this low current regime, electrical injection does not adversely affect the optical pump threshold, leading to a projected threshold current density of ≈2 kA cm−2. Operation at low temperature can significantly decrease this threshold, but must overcome extrinsic carrier freeze‐out in the doped organic transport layers to maintain a reasonable drive voltage.
more » « less- Award ID(s):
- 1807797
- NSF-PAR ID:
- 10455911
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Optical Materials
- Volume:
- 8
- Issue:
- 1
- ISSN:
- 2195-1071
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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