Sheetz, Brian S., Bandara, Y.M. Nuwan, Rickson, Benjamin, Auten, Michael, and Dwyer, Jason R. Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation. Retrieved from https://par.nsf.gov/biblio/10158790. ACS Applied Nano Materials 3.3 Web. doi:10.1021/acsanm.0c00248.

Sheetz, Brian S., Bandara, Y.M. Nuwan, Rickson, Benjamin, Auten, Michael, & Dwyer, Jason R. Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation. ACS Applied Nano Materials, 3 (3). Retrieved from https://par.nsf.gov/biblio/10158790. https://doi.org/10.1021/acsanm.0c00248

Sheetz, Brian S., Bandara, Y.M. Nuwan, Rickson, Benjamin, Auten, Michael, and Dwyer, Jason R. "Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation". ACS Applied Nano Materials 3 (3). Country unknown/Code not available. https://doi.org/10.1021/acsanm.0c00248. https://par.nsf.gov/biblio/10158790.

@article{osti_10158790,
place = {Country unknown/Code not available}, title = {Rapid, General-Purpose Patterning of Silicon Nitride Thin Films Under Ambient Conditions for Applications Including Fluid Channel and SERS Substrate Formation}, url = {https://par.nsf.gov/biblio/10158790}, DOI = {10.1021/acsanm.0c00248}, abstractNote = {}, journal = {ACS Applied Nano Materials}, volume = {3}, number = {3}, author = {Sheetz, Brian S. and Bandara, Y.M. Nuwan and Rickson, Benjamin and Auten, Michael and Dwyer, Jason R.}, }