- Publication Date:
- NSF-PAR ID:
- 10159551
- Journal Name:
- Advanced electronic materials
- Volume:
- 6
- ISSN:
- 2199-160X
- Sponsoring Org:
- National Science Foundation
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A carboxylated thiophene polymer-based chemiresistive device in a field-effect transistor (FET) configuration with unusual and enhanced responses to the widespread pollutants nitrogen dioxide (NO 2 ) and ammonia (NH 3 ) is described. The device based on a polymeric thiophene carboxylic acid showed a dramatic and superlinear increase in drain current ( I D ) of over 15 000% to a ramped exposure to 10 ppm NO 2 over several minutes, while its ethyl ester counterpart had significantly lower response. Devices incorporating either an ester or carboxylic acid displayed comparable and previously unreported increases in I D from 10 ppm ramped NH 3 exposure of 200–300%. Conventional poly(alkylthiophenes) showed the expected current decreases from similar NH 3 exposures. Using threshold voltage shifts in silicon transistors coupled to our recently reported remote gate (RG) platform with thiophene polymer coatings, we determined that two differing response mechanisms are associated with the two gas exposures. By calculating the charge density induced in the polymers by NO 2 exposure using the silicon transistor voltage shifts, we conclude that proton conduction contributes significantly to the high sensitivity of the carboxylic acid to NO 2 , in addition to doping that was observed for all four polymers.more »
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The rational creation of two-component conjugated polymer systems with high levels of phase purity in each component is challenging but crucial for realizing printed soft-matter electronics. Here, we report a mixed-flow microfluidic printing (MFMP) approach for two-component
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