skip to main content

Title: Systematic study of shockley-read-hall and radiative recombination in GaN on Al 2 O 3 , freestanding GaN, and GaN on Si
Authors:
; ; ; ;
Award ID(s):
1652871
Publication Date:
NSF-PAR ID:
10160076
Journal Name:
Journal of Physics: Photonics
Volume:
2
Issue:
3
Page Range or eLocation-ID:
Article No. 035003
ISSN:
2515-7647
Publisher:
IOP Publishing
Sponsoring Org:
National Science Foundation
More Like this
  1. Epitaxial Sc x Al 1− x N thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1− x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1− x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extendmore »transistor operation for power electronics and high-speed microwave applications.« less