Mandyam, Srinivas V., Zhao, Meng-Qiang, Masih Das, Paul, Zhang, Qicheng, Price, Christopher C., Gao, Zhaoli, Shenoy, Vivek B., Drndić, Marija, and Johnson, Alan T. Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions. Retrieved from https://par.nsf.gov/biblio/10160221. ACS Nano 13.9 Web. doi:10.1021/acsnano.9b04453.

Mandyam, Srinivas V., Zhao, Meng-Qiang, Masih Das, Paul, Zhang, Qicheng, Price, Christopher C., Gao, Zhaoli, Shenoy, Vivek B., Drndić, Marija, & Johnson, Alan T. Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions. ACS Nano, 13 (9). Retrieved from https://par.nsf.gov/biblio/10160221. https://doi.org/10.1021/acsnano.9b04453

Mandyam, Srinivas V., Zhao, Meng-Qiang, Masih Das, Paul, Zhang, Qicheng, Price, Christopher C., Gao, Zhaoli, Shenoy, Vivek B., Drndić, Marija, and Johnson, Alan T. "Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions". ACS Nano 13 (9). Country unknown/Code not available. https://doi.org/10.1021/acsnano.9b04453. https://par.nsf.gov/biblio/10160221.

@article{osti_10160221,
place = {Country unknown/Code not available}, title = {Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P–N Junctions}, url = {https://par.nsf.gov/biblio/10160221}, DOI = {10.1021/acsnano.9b04453}, abstractNote = {}, journal = {ACS Nano}, volume = {13}, number = {9}, author = {Mandyam, Srinivas V. and Zhao, Meng-Qiang and Masih Das, Paul and Zhang, Qicheng and Price, Christopher C. and Gao, Zhaoli and Shenoy, Vivek B. and Drndić, Marija and Johnson, Alan T.}, }