The scaling of many photonic quantum information processing systems is ultimately limited by the flux of quantum light throughout an integrated photonic circuit. Source brightness and waveguide loss set basic limits on the on-chip photon flux. While substantial progress has been made, separately, towards ultra-low loss chip-scale photonic circuits and high brightness single-photon sources, integration of these technologies has remained elusive. Here, we report the integration of a quantum emitter single-photon source with a wafer-scale, ultra-low loss silicon nitride photonic circuit. We demonstrate triggered and pure single-photon emission into a Si3N4photonic circuit with ≈ 1 dB/m propagation loss at a wavelength of ≈ 930 nm. We also observe resonance fluorescence in the strong drive regime, showing promise towards coherent control of quantum emitters. These results are a step forward towards scaled chip-integrated photonic quantum information systems in which storing, time-demultiplexing or buffering of deterministically generated single-photons is critical.
Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/
- PAR ID:
- 10160564
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 28
- Issue:
- 8
- ISSN:
- 1094-4087; OPEXFF
- Format(s):
- Medium: X Size: Article No. 11692
- Size(s):
- Article No. 11692
- Sponsoring Org:
- National Science Foundation
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While photonic integration has made remarkable progress in recent years, there is no one integrated photonic platform that offers all desired functionalities and manufacturability on the same platform. GaAs and InP-based optoelectronic integrated circuits (OEICs) were very popular in the past decades; however, silicon photonics has recently emerged as a preferred platform due to its high-density and high-yield manufacturability leveraging the CMOS ecosystem, although it lacks optical gain, the Pockels effect, and other characteristics. On the other hand, hybrid photonic integration adds new and diverse functionalities to the host materials like silicon. This opinion paper investigates hybrid integrated photonic platforms, and discusses the new functionalities added to the silicon CMOS photonic platform.
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