Abstract This work focuses on the low frequency Drude response of bulk-insulating topological insulator (TI) Bi 2 Se 3 films. The frequency and field dependence of the mobility and carrier density are measured simultaneously via time-domain terahertz spectroscopy. These films are grown on buffer layers, capped by Se, and have been exposed in air for months. Under a magnetic field up to 7 Tesla, we observe prominent cyclotron resonances (CRs). We attribute the sharp CR to two different topological surface states from both surfaces of the films. The CR sharpens at high fields due to an electron-impurity scattering. By using magneto-terahertz spectroscopy, we confirm that these films are bulk-insulating, which paves the way to use intrinsic TIs without bulk carriers for applications including topological spintronics and quantum computing.
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Magnetization switching using topological surface states
Topological surface states (TSSs) in a topological insulator are expected to be able to produce a spin-orbit torque that can switch a neighboring ferromagnet. This effect may be absent if the ferromagnet is conductive because it can completely suppress the TSSs, but it should be present if the ferromagnet is insulating. This study reports TSS-induced switching in a bilayer consisting of a topological insulator Bi 2 Se 3 and an insulating ferromagnet BaFe 12 O 19 . A charge current in Bi 2 Se 3 can switch the magnetization in BaFe 12 O 19 up and down. When the magnetization is switched by a field, a current in Bi 2 Se 3 can reduce the switching field by ~4000 Oe. The switching efficiency at 3 K is 300 times higher than at room temperature; it is ~30 times higher than in Pt/BaFe 12 O 19 . These strong effects originate from the presence of more pronounced TSSs at low temperatures due to enhanced surface conductivity and reduced bulk conductivity.
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- NSF-PAR ID:
- 10162493
- Author(s) / Creator(s):
- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 5
- Issue:
- 8
- ISSN:
- 2375-2548
- Page Range / eLocation ID:
- eaaw3415
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Topological surface states (TSSs) coexist with a rapidly formed two-dimensional electron gas (2DEG) at the surface of Bi 2 Se 3 . While this complex band structure has been widely studied for its interactions between the two states in terms of electrical conductivity and carrier density, the resulting thermopower has not been investigated as thoroughly. Here, we report measurements of the temperature dependent Seebeck coefficient ( S) and electrical conductivity ( σ) on an undoped 10 nm thin Bi 2 Se 3 film over the temperature range of 100–300 K to find an overall metal-like behavior. The measured S is consistent with the theory when assuming that both the TSS and the 2DEG contribute to thermoelectric transport. Our analysis further shows that the coefficient corresponds to a Fermi level situated well above the conduction band minima of the 2DEG, resulting in comparable contributions from the TSS and the 2DEG. The thermoelectric power factor ( S 2 σ) at 300 K increases by 10%–30% over the bulk. This work provides insights into understanding and enhancing thermoelectric phenomena in topological insulators.more » « less
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A quantum anomalous Hall (QAH) insulator is a topological phase in which the interior is insulating but electrical current flows along the edges of the sample in either a clockwise or counterclockwise direction, as dictated by the spontaneous magnetization orientation. Such a chiral edge current eliminates any backscattering, giving rise to quantized Hall resistance and zero longitudinal resistance. Here we fabricate mesoscopic QAH sandwich Hall bar devices and succeed in switching the edge current chirality through thermally assisted spin–orbit torque (SOT). The well-quantized QAH states before and after SOT switching with opposite edge current chiralities are demonstrated through four- and three-terminal measurements. We show that the SOT responsible for magnetization switching can be generated by both surface and bulk carriers. Our results further our understanding of the interplay between magnetism and topological states and usher in an easy and instantaneous method to manipulate the QAH state.more » « less
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Abstract The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2grown epitaxially on ZrTe2is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2(3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1126/sciadv.aaw3415
