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Title: Two-dimensional optomechanical crystal cavity with high quantum cooperativity

Optomechanical systems offer new opportunities in quantum information processing and quantum sensing. Many solid-state quantum devices operate at millikelvin temperatures—however, it has proven challenging to operate nanoscale optomechanical devices at these ultralow temperatures due to their limited thermal conductance and parasitic optical absorption. Here, we present a two-dimensional optomechanical crystal resonator capable of achieving large cooperativityCand small effective bath occupancynb, resulting in a quantum cooperativityCeff ≡ C/nb > 1 under continuous-wave optical driving. This is realized using a two-dimensional phononic bandgap structure to host the optomechanical cavity, simultaneously isolating the acoustic mode of interest in the bandgap while allowing heat to be removed by phonon modes outside of the bandgap. This achievement paves the way for a variety of applications requiring quantum-coherent optomechanical interactions, such as transducers capable of bi-directional conversion of quantum states between microwave frequency superconducting quantum circuits and optical photons in a fiber optic network.

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Author(s) / Creator(s):
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Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Nature Communications
Medium: X
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 
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