Wu, Jiangbin, Chen, Hung-Yu, Yang, Ning, Cao, Jun, Yan, Xiaodong, Liu, Fanxin, Sun, Qibin, Ling, Xi, Guo, Jing, and Wang, Han. High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation. Retrieved from https://par.nsf.gov/biblio/10170781. Nature Electronics . Web. doi:10.1038/s41928-020-0441-9.

Wu, Jiangbin, Chen, Hung-Yu, Yang, Ning, Cao, Jun, Yan, Xiaodong, Liu, Fanxin, Sun, Qibin, Ling, Xi, Guo, Jing, & Wang, Han. High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation. Nature Electronics, (). Retrieved from https://par.nsf.gov/biblio/10170781. https://doi.org/10.1038/s41928-020-0441-9

Wu, Jiangbin, Chen, Hung-Yu, Yang, Ning, Cao, Jun, Yan, Xiaodong, Liu, Fanxin, Sun, Qibin, Ling, Xi, Guo, Jing, and Wang, Han. "High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation". Nature Electronics (). Country unknown/Code not available. https://doi.org/10.1038/s41928-020-0441-9. https://par.nsf.gov/biblio/10170781.

@article{osti_10170781,
place = {Country unknown/Code not available}, title = {High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation}, url = {https://par.nsf.gov/biblio/10170781}, DOI = {10.1038/s41928-020-0441-9}, abstractNote = {}, journal = {Nature Electronics}, author = {Wu, Jiangbin and Chen, Hung-Yu and Yang, Ning and Cao, Jun and Yan, Xiaodong and Liu, Fanxin and Sun, Qibin and Ling, Xi and Guo, Jing and Wang, Han}, }