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Title: Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
NSF-PAR ID:
10171467
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
Journal of Applied Physics
Volume:
128
Issue:
2
ISSN:
0021-8979
Page Range / eLocation ID:
Article No. 025703
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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