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1. Sidewall Electrical Damage in β-Ga 2 O 3 Rectifiers Exposed to Ga + Focused Ion Beams

   https://doi.org/10.1149/2162-8777/acce6a  

   Xia, Xinyi ; Al-Mamun, Nahid Sultan ; Ren, Fan ; Haque, Aman ; Pearton, S. J. ( May 2023 , ECS Journal of Solid State Science and Technology)

   The energy and beam current dependence of Ga⁺focused ion beam milling damage on the sidewall of vertical rectifiers fabricated on n-type Ga₂O₃was investigated with 5–30 kV ions and beam currents from 1.3–20 nA. The sidewall damage was introduced by etching a mesa along one edge of existing Ga₂O₃rectifiers. We employed on-state resistance, forward and reverse leakage current, Schottky barrier height, and diode ideality factor from the vertical rectifiers as potential measures of the extent of the ion-induced sidewall damage. Rectifiers of different diameters were exposed to the ion beams and the “zero-area” parameters extracted by extrapolating to zero area and normalizing for milling depth. Forward currents degraded with exposure to any of our beam conductions, while reverse current was unaffected. On-state resistance was found to be most sensitive of the device parameters to Ga⁺beam energy and current. Beam current was the most important parameter in creating sidewall damage. Use of subsequent lower beam energies and currents after an initial 30 kV mill sequence was able to reduce residual damage effects but not to the point of initial lower beam current exposures.

    

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2. Magneto-optical properties of Cr 3+ in β-Ga 2 O 3

   https://doi.org/10.1063/5.0060628  

   Stehr, Jan E. ; Jansson, Mattias ; Hofmann, Detlev M. ; Kim, Jihyun ; Pearton, Stephen J. ; Chen, Weimin M. ; Buyanova, Irina A. ( August 2021 , Applied Physics Letters)
3. 4.4 kV β-Ga 2 O 3 MESFETs with power figure of merit exceeding 100 MW cm −2

   https://doi.org/10.35848/1882-0786/ac6729  

   Bhattacharyya, Arkka ; Sharma, Shivam ; Alema, Fikadu ; Ranga, Praneeth ; Roy, Saurav ; Peterson, Carl ; Seryogin, Geroge ; Osinsky, Andrei ; Singisetti, Uttam ; Krishnamoorthy, Sriram ( May 2022 , Applied Physics Express)

   Abstract β -Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages ( V BR ) and ON currents ( I DMAX ). A sandwiched SiN x dielectric field plate design is utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L GD = 34.5 μ m exhibits an I DMAX of 56 mA mm −1 , a high I ON / I OFF ratio >10 8 and a very low reverse leakage until catastrophic breakdown at ∼4.4 kV. A power figure of merit (PFOM) of 132 MW cm −2 was calculated for a V BR of ∼4.4 kV. The reported results are the first >4 kV class Ga 2 O 3 transistors to surpass the theoretical unipolar FOM of silicon. 

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4. High-k Oxide Field-Plated Vertical (001) β-Ga 2 O 3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm 2

   https://doi.org/10.1109/LED.2021.3089945  

   Roy, Saurav ; Bhattacharyya, Arkka ; Ranga, Praneeth ; Splawn, Heather ; Leach, Jacob ; Krishnamoorthy, Sriram ( August 2021 , IEEE Electron Device Letters)

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5. Breakdown mechanism in 1 kA/cm 2 and 960 V E-mode β -Ga 2 O 3 vertical transistors

   https://doi.org/10.1063/1.5038105  

   Hu, Zongyang ; Nomoto, Kazuki ; Li, Wenshen ; Zhang, Zexuan ; Tanen, Nicholas ; Thieu, Quang Tu ; Sasaki, Kohei ; Kuramata, Akito ; Nakamura, Tohru ; Jena, Debdeep ; et al ( September 2018 , Applied Physics Letters)