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  • Characterization of Graphene Directly Grown at Ni/SiO 2 Interface Using Inductively Coupled Chemical Vapor Deposition (ICP-CVD) at a Low Temperature
Title: Characterization of Graphene Directly Grown at Ni/SiO 2 Interface Using Inductively Coupled Chemical Vapor Deposition (ICP-CVD) at a Low Temperature
Award ID(s):
1711994
PAR ID:
10184695
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Microscopy and Microanalysis
ISSN:
1431-9276
Page Range / eLocation ID:
1 to 3
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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