This paper presents a new way of designing multi-mode switchable power amplifier without relying on any extra tuning elements. By operating the RF GaN transistor as a switch (digital) or amplifier (analog), it enables three different modes within a quadrature-balanced load-modulation architecture, including series/parallel Doherty and hybrid load modulated balanced amplifier (H-LMBA), which can be optimally configured according to different load conditions. Based on this new method, an intrinsically mode-switchable load-modulation PA is designed with GaN transistors and branch-line quadrature coupler at 1.7 GHz. Together with the unique harmonic-tuned method, the nominal mode of H-LMBA (for matched condition) achieves a high-order load modulation with > 62% measured efficiency across a 10-dB output back-off (OBO) range. Efficient performance is also demonstrated at series/parallel Doherty modes, which are configured with exchangeable main/auxiliary roles and dedicated switch settings offering mismatch resilience.
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Pseudo-Doherty Load-Modulated Balanced Amplifier With Wide Bandwidth and Extended Power Back-Off Range
This article presents a novel architecture of load-modulated balanced amplifier (LMBA) with a unique load-modulation characteristic different from any existing LMBAs and Doherty power amplifiers (DPAs), which is named pseudo-Doherty LMBA (PD-LMBA). Based on a special combination of control amplifier (carrier) and balanced amplifier (peaking) together with proper phase and amplitude controls, an optimal load-modulation behavior can be achieved for PD-LMBA, leading to maximized efficiency over extended power back-off range. More importantly, the efficiency optimization can be achieved with only a static setting of phase offset at a given frequency, which greatly simplifies the complexity for phase control. Furthermore, the cooperations of the carrier and peaking amplifiers in PD-LMBA are fully decoupled, thus lifting the fundamental bandwidth barrier imposed on the Doherty-based active load modulation. Upon theoretical proof of these discoveries, a wideband RF-input PD-LMBA is physically developed using the GaN technology for experimental demonstration. The prototype achieves a highly efficient performance from 1.5 to 2.7 GHz, e.g., 58%–72% of efficiency at 42.5-dBm peak power and 47%–58% at 10-dB output back-off (OBO). When stimulated by a 10-MHz long term evolution (LTE) signal with a 9.5-dB peak-to-average power ratio (PAPR), the developed PD-LMBA achieves an efficiency of 44%–53% over the entire bandwidth at an average output power of around 33 dBm.
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- Award ID(s):
- 1914875
- NSF-PAR ID:
- 10186657
- Date Published:
- Journal Name:
- IEEE Transactions on Microwave Theory and Techniques
- Volume:
- 68
- Issue:
- 7
- ISSN:
- 0018-9480
- Page Range / eLocation ID:
- 3172 - 3183
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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