Understanding of multiple resistance states by current sweeping in MoS 2 -based non-volatile memory devices
- Award ID(s):
- 1809017
- NSF-PAR ID:
- 10187786
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Nanotechnology
- Volume:
- 31
- Issue:
- 46
- ISSN:
- 0957-4484
- Page Range / eLocation ID:
- Article No. 465206
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation