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Title: Observing relaxation in device quality InGaN templates by TEM techniques
Award ID(s):
1833323
PAR ID:
10188465
Author(s) / Creator(s):
; ; ; ; ;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
116
Issue:
10
ISSN:
0003-6951
Page Range / eLocation ID:
102104
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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