Observing relaxation in device quality InGaN templates by TEM techniques (Journal Article) | NSF PAGES

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Citation Details

Observing relaxation in device quality InGaN templates by TEM techniques

Award ID(s):: 1833323

NSF-PAR ID:: 10188465

Author(s) / Creator(s):: Eldred, Tim B.; Abdelhamid, Mostafa; Reynolds, J. G.; El-Masry, N. A.; LeBeau, James M.; Bedair, S. M.

Date Published:: 2020-03-09

Journal Name:: Applied Physics Letters

Volume:: 116

Issue:: 10

ISSN:: 0003-6951

Page Range / eLocation ID:: 102104

Format(s):: Medium: X

Sponsoring Org:: National Science Foundation

Free Publicly Accessible Full Text
Accepted Manuscript1.0
Journal Article:
https://doi.org/10.1063/1.5139269