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Title: GaAs epitaxial growth on R-plane sapphire substrate
Award ID(s):
1745143 1809054
NSF-PAR ID:
10188747
Author(s) / Creator(s):
; ; ; ; ; ;
Date Published:
Journal Name:
Journal of Crystal Growth
Volume:
548
Issue:
C
ISSN:
0022-0248
Page Range / eLocation ID:
125848
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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