Saha, Samir K., Kumar, Rahul, Kuchuk, Andrian, Stanchu, Hryhorii, Mazur, Yuriy I., Yu, Shui-Qing, and Salamo, Gregory J. GaAs epitaxial growth on R-plane sapphire substrate. Retrieved from https://par.nsf.gov/biblio/10188747. Journal of Crystal Growth 548.C Web. doi:10.1016/j.jcrysgro.2020.125848.

Saha, Samir K., Kumar, Rahul, Kuchuk, Andrian, Stanchu, Hryhorii, Mazur, Yuriy I., Yu, Shui-Qing, & Salamo, Gregory J. GaAs epitaxial growth on R-plane sapphire substrate. Journal of Crystal Growth, 548 (C). Retrieved from https://par.nsf.gov/biblio/10188747. https://doi.org/10.1016/j.jcrysgro.2020.125848

Saha, Samir K., Kumar, Rahul, Kuchuk, Andrian, Stanchu, Hryhorii, Mazur, Yuriy I., Yu, Shui-Qing, and Salamo, Gregory J. "GaAs epitaxial growth on R-plane sapphire substrate". Journal of Crystal Growth 548 (C). Country unknown/Code not available. https://doi.org/10.1016/j.jcrysgro.2020.125848. https://par.nsf.gov/biblio/10188747.

@article{osti_10188747,
place = {Country unknown/Code not available}, title = {GaAs epitaxial growth on R-plane sapphire substrate}, url = {https://par.nsf.gov/biblio/10188747}, DOI = {10.1016/j.jcrysgro.2020.125848}, abstractNote = {}, journal = {Journal of Crystal Growth}, volume = {548}, number = {C}, author = {Saha, Samir K. and Kumar, Rahul and Kuchuk, Andrian and Stanchu, Hryhorii and Mazur, Yuriy I. and Yu, Shui-Qing and Salamo, Gregory J.}, }