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Abstract Using electrodynamical description of the average power absorbed by a conducting film, we present an expression for the electric-field intensity enhancement (FIE) due to epsilon-near-zero (ENZ) polariton modes. We show that FIE reaches a limit in ultrathin ENZ films inverse of second power of ENZ losses. This is illustrated in an exemplary series of aluminum-doped zinc oxide nanolayers grown by atomic layer deposition. Only in a case of unrealistic lossless ENZ films, FIE follows the inverse second power of film thickness predicted by S. Campione, et al. [ Phys. Rev. B , vol. 91, no. 12, art. 121408, 2015]. We also predict that FIE could reach values of 100,000 in ultrathin polar semiconductor films. This work is important for establishing the limits of plasmonic field enhancement and the development of near zero refractive index photonics, nonlinear optics, thermal, and quantum optics in the ENZ regime.
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Transdimensional epsilon-near-zero modes in planar plasmonic nanostructures
We use quantum electrodynamics and the confinement-induced nonlocal dielectric response model based on the Keldysh-Rytova electron interaction potential to study the epsilon-near-zero modes of metallic films in the transdimensional regime. Peculiar effects are revealed such as the plasmon mode degeneracy lifting and the dipole emitter coupling to the split epsilon-near-zero modes, leading to thickness-controlled spontaneous decay with rates increased by up to three orders of magnitude.
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- Award ID(s):
- 1830874
- PAR ID:
- 10188882
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review Research
- Volume:
- 2
- ISSN:
- 2643-1564
- Page Range / eLocation ID:
- 013070
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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