Wang, Weijie, Lee, Seung Min, Pouladi, Sara, Chen, Jie, Shervin, Shahab, Yoon, Seonno, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Chatterjee, Bikramjit, Choi, Sukwon, Oh, Jungwoo, and Ryou, Jae-Hyun. Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. Retrieved from https://par.nsf.gov/biblio/10189316. Applied Physics Letters 115.10 Web. doi:10.1063/1.5108832.

Wang, Weijie, Lee, Seung Min, Pouladi, Sara, Chen, Jie, Shervin, Shahab, Yoon, Seonno, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Chatterjee, Bikramjit, Choi, Sukwon, Oh, Jungwoo, & Ryou, Jae-Hyun. Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 115 (10). Retrieved from https://par.nsf.gov/biblio/10189316. https://doi.org/10.1063/1.5108832

Wang, Weijie, Lee, Seung Min, Pouladi, Sara, Chen, Jie, Shervin, Shahab, Yoon, Seonno, Yum, Jung Hwan, Larsen, Eric S., Bielawski, Christopher W., Chatterjee, Bikramjit, Choi, Sukwon, Oh, Jungwoo, and Ryou, Jae-Hyun. "Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors". Applied Physics Letters 115 (10). Country unknown/Code not available. https://doi.org/10.1063/1.5108832. https://par.nsf.gov/biblio/10189316.

@article{osti_10189316,
place = {Country unknown/Code not available}, title = {Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors}, url = {https://par.nsf.gov/biblio/10189316}, DOI = {10.1063/1.5108832}, abstractNote = {}, journal = {Applied Physics Letters}, volume = {115}, number = {10}, author = {Wang, Weijie and Lee, Seung Min and Pouladi, Sara and Chen, Jie and Shervin, Shahab and Yoon, Seonno and Yum, Jung Hwan and Larsen, Eric S. and Bielawski, Christopher W. and Chatterjee, Bikramjit and Choi, Sukwon and Oh, Jungwoo and Ryou, Jae-Hyun}, }