Reilly, Caroline E, Bonef, Bastien, Nakamura, Shuji, Speck, James S, DenBaars, Steven P, and Keller, Stacia. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition. Retrieved from https://par.nsf.gov/biblio/10191608. Semiconductor Science and Technology 34.12 Web. doi:10.1088/1361-6641/ab4b93.

Reilly, Caroline E, Bonef, Bastien, Nakamura, Shuji, Speck, James S, DenBaars, Steven P, & Keller, Stacia. Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition. Semiconductor Science and Technology, 34 (12). Retrieved from https://par.nsf.gov/biblio/10191608. https://doi.org/10.1088/1361-6641/ab4b93

Reilly, Caroline E, Bonef, Bastien, Nakamura, Shuji, Speck, James S, DenBaars, Steven P, and Keller, Stacia. "Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition". Semiconductor Science and Technology 34 (12). Country unknown/Code not available. https://doi.org/10.1088/1361-6641/ab4b93. https://par.nsf.gov/biblio/10191608.

@article{osti_10191608,
place = {Country unknown/Code not available}, title = {Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition}, url = {https://par.nsf.gov/biblio/10191608}, DOI = {10.1088/1361-6641/ab4b93}, abstractNote = {}, journal = {Semiconductor Science and Technology}, volume = {34}, number = {12}, author = {Reilly, Caroline E and Bonef, Bastien and Nakamura, Shuji and Speck, James S and DenBaars, Steven P and Keller, Stacia}, }