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Title: High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films
Award ID(s):
1839077
PAR ID:
10195763
Author(s) / Creator(s):
; ;
Date Published:
Journal Name:
Journal of Crystal Growth
Volume:
546
Issue:
C
ISSN:
0022-0248
Page Range / eLocation ID:
125738
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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