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1. Efficient and compact thermo-optic phase shifter in silicon-rich silicon nitride

   https://doi.org/10.1364/OL.431757  

   Nejadriahi, Hani ; Pappert, Steve ; Fainman, Yeshaiahu ; Yu, Paul ( September 2021 , Optics Letters)

   The design, fabrication, and characterization of low-loss ultra-compact bends in high-index ($n=3.1$at$\mathrm{\lambda <\#comment/>}=1550\mathrm{n}\mathrm{m}$) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of$65\times <\#comment/>65\text{µ<\#comment/>}{\mathrm{m}}^2$, having a total active waveguide length of 1.2 mm. The device featured a phase-shifting efficiency of$8\mathrm{m}\mathrm{W}/\mathrm{\pi <\#comment/>}$and a 3 dB switching bandwidth of 15 KHz. We propose SRN as a promising thermo-optic platform that combines the properties of silicon and stoichiometric silicon nitride.

    

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2. Demonstration of the DC-Kerr effect in silicon-rich nitride

   https://doi.org/10.1364/OL.432359  

   Friedman, Alex ; Nejadriahi, Hani ; Sharma, Rajat ; Fainman, Yeshaiahu ( August 2021 , Optics Letters)

   We demonstrate the DC-Kerr effect in plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) and use it to demonstrate a third order nonlinear susceptibility,${\mathrm{\chi <\#comment/>}}^{(3)}$, as high as$(6\pm <\#comment/>0.58)\times <\#comment/>{10}^{-<\#comment/>19}{\mathrm{m}}^2/{\mathrm{V}}^2$. We employ spectral shift versus applied voltage measurements in a racetrack resonator as a tool to characterize the nonlinear susceptibilities of these films. In doing so, we demonstrate a${\mathrm{\chi <\#comment/>}}^{(3)}$larger than that of silicon and argue that PECVD SRN can provide a versatile platform for employing optical phase shifters while maintaining a low thermal budget using a deposition technique readily available in CMOS process flows.

    

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3. Mid-IR spectroscopy of Er 3+ doped low-phonon CsCdCl 3 and CsPbCl 3 crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei Ei ; Fleischman, Zackery D. ; McKay, Jason ; Hommerich, Uwe ; Kabir, Al Amin ; Riggins, Jazmine ; Trivedi, Sudhir ; Dubinskii, Mark ( September 2022 , Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at$\sim <\#comment/>800\mathrm{n}\mathrm{m}$and$\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at$\sim <\#comment/>1.55$,$\sim <\#comment/>2.75$,$\sim <\#comment/>3.5$, and$\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of$\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of$\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in${\mathrm{E}\mathrm{r}}^{3+}$doped${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be$\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and$\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed.

    

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4. Single-shot ultrafast visualization and measurement of laser–matter interactions in flexible glass using frequency domain holography

   https://doi.org/10.1364/OL.382645  

   Dempsey, Dennis ; Nagar, Garima C. ; Renskers, Christopher K. ; Grynko, Rostislav I. ; Sutherland, James S. ; Shim, Bonggu ( February 2020 , Optics Letters)

   We perform single-shot frequency domain holography to measure the ultrafast spatio-temporal phase change induced by the optical Kerr effect and plasma in flexible Corning Willow Glass during femtosecond laser–matter interactions. We measure the nonlinear index of refraction ($n_2$) to be$(3.6\pm <\#comment/>0.1)\times <\#comment/>{10}^{-<\#comment/>16}{\mathrm{c}\mathrm{m}}^2/\mathrm{W}$and visualize the plasma formation and recombination on femtosecond time scales in a single shot. To compare with the experiment, we carry out numerical simulations by solving the nonlinear envelope equation.

    

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5. Electro-optic interface for ultrasensitive intracavity electric field measurements at microwave and terahertz frequencies

   https://doi.org/10.1364/OPTICA.384160  

   Benea-Chelmus, Ileana-Cristina ; Salamin, Yannick ; Settembrini, Francesca Fabiana ; Fedoryshyn, Yuriy ; Heni, Wolfgang ; Elder, Delwin L. ; Dalton, Larry R. ; Leuthold, Juerg ; Faist, Jérôme ( May 2020 , Optica)

   Electro-optic quantum coherent interfaces map the amplitude and phase of a quantum signal directly to the phase or intensity of a probe beam. At terahertz frequencies, a fundamental challenge is not only to sense such weak signals (due to a weak coupling with a probe in the near-infrared) but also to resolve them in the time domain. Cavity confinement of both light fields can increase the interaction and achieve strong coupling. Using this approach, current realizations are limited to low microwave frequencies. Alternatively, in bulk crystals, electro-optic sampling was shown to reach quantum-level sensitivity of terahertz waves. Yet, the coupling strength was extremely weak. Here, we propose an on-chip architecture that concomitantly provides subcycle temporal resolution and an extreme sensitivity to sense terahertz intracavity fields below 20 V/m. We use guided femtosecond pulses in the near-infrared and a confinement of the terahertz wave to a volume of$V_{\mathrm{T}\mathrm{H}\mathrm{z}}\sim <\#comment/>{10}^{-<\#comment/>9}({\mathrm{\lambda <\#comment/>}}_{\mathrm{T}\mathrm{H}\mathrm{z}}/2{)}^3$in combination with ultraperformant organic molecules ($r_{33}=170\mathrm{p}\mathrm{m}/\mathrm{V}$) and accomplish a record-high single-photon electro-optic coupling rate of$g_{\mathrm{e}\mathrm{o}}=2\mathrm{\pi <\#comment/>}\times <\#comment/>0.043\mathrm{G}\mathrm{H}\mathrm{z}$, 10,000 times higher than in recent reports of sensing vacuum field fluctuations in bulk media. Via homodyne detection implemented directly on chip, the interaction results into an intensity modulation of the femtosecond pulses. The single-photon cooperativity is$C_0=1.6\times <\#comment/>{10}^{-<\#comment/>8}$, and the multiphoton cooperativity is$C=0.002$at room temperature. We show$><\#comment/>70\mathrm{d}\mathrm{B}$dynamic range in intensity at 500 ms integration under irradiation with a weak coherent terahertz field. Similar devices could be employed in future measurements of quantum states in the terahertz at the standard quantum limit, or for entanglement of subsystems on subcycle temporal scales, such as terahertz and near-infrared quantum bits.

    

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