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1. Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

   https://doi.org/10.1038/s41467-020-17766-5  

   Jnawali, Giriraj ; Xiang, Yuan ; Linser, Samuel M. ; Shojaei, Iraj Abbasian ; Wang, Ruoxing ; Qiu, Gang ; Lian, Chao ; Wong, Bryan M. ; Wu, Wenzhuo ; Ye, Peide D. ; et al ( August 2020 , Nature Communications)

   Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-splitH₄andH₅and the degenerateH₆valence bands (VB) and the lowest degenerateH₆conduction band (CB) as well as a higher energy transition at the L-point. Surprisingly, the degeneracy of theH₆CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

    

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2. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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3. Plasmonic‐Enhanced Cholesteric Films: Coassembling Anisotropic Gold Nanorods with Cellulose Nanocrystals

   https://doi.org/10.1002/adom.201801816  

   Cheng, Zheng ; Ma, Yi ; Yang, Lin ; Cheng, Feng ; Huang, Zhongjie ; Natan, Avi ; Li, Hongyan ; Chen, Yong ; Cao, Daxian ; Huang, Zhifeng ; et al ( February 2019 , Advanced Optical Materials)

   Incorporating photonic crystals with nanoplasmonic building blocks gives rise to novel optoelectronic properties that promise designing advanced multifunctional materials and electronics. Herein, the free‐standing chiral plasmonic composite films are designed by coassembling anisotropic plasmonic gold nanorods (GNRs) and rod‐like cellulose nanocrystals (CNCs). The effects of surface charge and concentration of the GNRs on the structure and optical properties of the CNC/GNR films are examined within this study. The CNC/GNR hybrid films retain the photonic characteristic of the CNCs host while concomitantly possessing the plasmonic resonance of GNRs. The negatively charged GNRs distribute uniformly in the layered CNCs host, inducing strong electrostatic repulsion among the CNCs and thus promoting the formation of a larger helical pitch than the case without GNRs. The positively charged GNRs decrease the chiroptical activity in the composite films with increasing the concentration of GNR, which is confirmed by the circular dichroism spectra. Notably, the surface plasmon resonances of GNRs enhance the fluorescence emission, which has been demonstrated by surface‐enhanced fluorescence signals in this work. This study sheds light on fabricating functional chiral plasmonic composite films with enhanced chiral plasmonics by utilizing CNCs as a dynamic chiral nematic template and adjusting surface charges.

    

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4. Fiber Coupled Near‐Field Thermoplasmonic Emission from Gold Nanorods at 1100 K

   https://doi.org/10.1002/smll.202007274  

   Li, Jiayu ; Wuenschell, Jeffrey ; Li, Zhuo ; Bera, Subhabrata ; Liu, Kai ; Tang, Renhong ; Du, Henry ; Ohodnicki, Paul R. ; Shen, Sheng ( March 2021 , Small)

   Nanostructured gold has attracted significant interest from materials science, chemistry, optics and photonics, and biology due to their extraordinary potential for manipulating visible and near‐infrared light through the excitation of plasmon resonances. However, gold nanostructures are rarely measured experimentally in their plasmonic properties and hardly used for high‐temperature applications because of the inherent instability in mass and shape due to the high surface energy at elevated temperatures. In this work, the first direct observation of thermally excited surface plasmons in gold nanorods at 1100 K is demonstrated. By coupling with an optical fiber in the near‐field, the thermally excited surface plasmons from gold nanorods can be converted into the propagating modes in the optical fiber and experimentally characterized in a remote manner. This fiber‐coupled technique can effectively characterize the near‐field thermoplasmonic emission from gold nanorods. A direct simulation scheme is also developed to quantitively understand the thermal emission from the array of gold nanorods. The experimental work in conjunction with the direct simulation results paves the way of using gold nanostructures as high‐temperature plasmonic nanomaterials, which has important implications in thermal energy conversion, thermal emission control, and chemical sensing.

    

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5. Plasmonically enhanced mid-IR light source based on tunable spectrally and directionally selective thermal emission from nanopatterned graphene

   https://doi.org/10.1038/s41598-020-73582-3  

   Shabbir, Muhammad Waqas ; Leuenberger, Michael N. ( October 2020 , Scientific Reports)

   We present a proof of concept for a spectrally selective thermal mid-IR source based on nanopatterned graphene (NPG) with a typical mobility of CVD-grown graphene (up to 3000$$\hbox {cm}^2\,\hbox {V}^{-1}\,\hbox {s}^{-1}$$${\text{cm}}^2{\text{V}}^{-1}{\text{s}}^{-1}$), ensuring scalability to large areas. For that, we solve the electrostatic problem of a conducting hyperboloid with an elliptical wormhole in the presence of anin-planeelectric field. The localized surface plasmons (LSPs) on the NPG sheet, partially hybridized with graphene phonons and surface phonons of the neighboring materials, allow for the control and tuning of the thermal emission spectrum in the wavelength regime from$$\lambda =3$$$\lambda =3$to 12$$\upmu$$$\mu$m by adjusting the size of and distance between the circular holes in a hexagonal or square lattice structure. Most importantly, the LSPs along with an optical cavity increase the emittance of graphene from about 2.3% for pristine graphene to 80% for NPG, thereby outperforming state-of-the-art pristine graphene light sources operating in the near-infrared by at least a factor of 100. According to our COMSOL calculations, a maximum emission power per area of$$11\times 10^3$$$11\times {10}^3$W/$$\hbox {m}^2$$${\text{m}}^2$at$$T=2000$$$T=2000$K for a bias voltage of$$V=23$$$V=23$V is achieved by controlling the temperature of the hot electrons through the Joule heating. By generalizing Planck’s theory to any grey body and deriving the completely general nonlocal fluctuation-dissipation theorem with nonlocal response of surface plasmons in the random phase approximation, we show that the coherence length of the graphene plasmons and the thermally emitted photons can be as large as 13$$\upmu$$$\mu$m and 150$$\upmu$$$\mu$m, respectively, providing the opportunity to create phased arrays made of nanoantennas represented by the holes in NPG. The spatial phase variation of the coherence allows for beamsteering of the thermal emission in the range between$$12^\circ$$${12}^{\circ }$and$$80^\circ$$${80}^{\circ }$by tuning the Fermi energy between$$E_F=1.0$$$E_F=1.0$eV and$$E_F=0.25$$$E_F=0.25$eV through the gate voltage. Our analysis of the nonlocal hydrodynamic response leads to the conjecture that the diffusion length and viscosity in graphene are frequency-dependent. Using finite-difference time domain calculations, coupled mode theory, and RPA, we develop the model of a mid-IR light source based on NPG, which will pave the way to graphene-based optical mid-IR communication, mid-IR color displays, mid-IR spectroscopy, and virus detection.

    

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