Fakhimi, P., Zhang, W-D., Growden, T. A., Brown, E.R., Droopad, R., Hansen, K.M., and Berger, P. R. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. Retrieved from https://par.nsf.gov/biblio/10199510. 2019 Device Research Conference (DRC) . Web. doi:10.1109/DRC46940.2019.9046392.

Fakhimi, P., Zhang, W-D., Growden, T. A., Brown, E.R., Droopad, R., Hansen, K.M., & Berger, P. R. New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs. 2019 Device Research Conference (DRC), (). Retrieved from https://par.nsf.gov/biblio/10199510. https://doi.org/10.1109/DRC46940.2019.9046392

Fakhimi, P., Zhang, W-D., Growden, T. A., Brown, E.R., Droopad, R., Hansen, K.M., and Berger, P. R. "New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs". 2019 Device Research Conference (DRC) (). Country unknown/Code not available. https://doi.org/10.1109/DRC46940.2019.9046392. https://par.nsf.gov/biblio/10199510.

@article{osti_10199510,
place = {Country unknown/Code not available}, title = {New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs}, url = {https://par.nsf.gov/biblio/10199510}, DOI = {10.1109/DRC46940.2019.9046392}, abstractNote = {}, journal = {2019 Device Research Conference (DRC)}, author = {Fakhimi, P. and Zhang, W-D. and Growden, T. A. and Brown, E.R. and Droopad, R. and Hansen, K.M. and Berger, P. R.}, editor = {null} }