Artificial Nociceptor Using 2D MoS 2 Threshold Switching Memristor
- Award ID(s):
- 1845331
- PAR ID:
- 10211259
- Date Published:
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 41
- Issue:
- 9
- ISSN:
- 0741-3106
- Page Range / eLocation ID:
- 1440 to 1443
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation