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Title: Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A
NSF-PAR ID:
10214197
Author(s) / Creator(s):
 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  
Publisher / Repository:
American Chemical Society
Date Published:
Journal Name:
Crystal Growth & Design
Volume:
21
Issue:
3
ISSN:
1528-7483
Page Range / eLocation ID:
p. 1674-1682
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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