Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A
- PAR ID:
- 10214197
- Publisher / Repository:
- American Chemical Society
- Date Published:
- Journal Name:
- Crystal Growth & Design
- Volume:
- 21
- Issue:
- 3
- ISSN:
- 1528-7483
- Page Range / eLocation ID:
- p. 1674-1682
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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